IXYS IXXK110N65B4H1

IXXK110N65B4H1 IXYS
IXXK110N65B4H1
IXYS

Product Information

Dimensions:
20.3 x 5.3 x 26.6mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
880 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
570 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-264
Minimum Operating Temperature:
-55 °C
Switching Speed:
10 → 30kHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
3mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
240 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 110A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
38ns/156ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
Gate Charge:
183 nC
Reverse Recovery Time (trr):
100 ns
title:
IXXK110N65B4H1
REACH Status:
REACH Unaffected
Switching Energy:
2.2mJ (on), 1.05mJ (off)
Test Condition:
400V, 55A, 2Ohm, 15V
Manufacturer:
IXYS
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
46 Weeks
IGBT Type:
PT
Current - Collector Pulsed (Icm):
630 A
Mounting Type:
Through Hole
Series:
GenX4™, XPT™
Supplier Device Package:
TO-264 (IXXK)
Packaging:
Tube
Power - Max:
880 W
Base Product Number:
IXXK110
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by IXYS. The manufacturer part number is IXXK110N65B4H1. The given dimensions of the product include 20.3 x 5.3 x 26.6mm. The product is available in through hole configuration. Provides up to 880 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 570 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-264. Whereas, the minimum operating temperature of the product is -55 °c. It has about 10 → 30khz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 3mj energy rating . The product offers single transistor configuration. The maximum collector current includes 240 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.1v @ 15v, 110a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 38ns/156ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features 183 nc gate charge. It has a trr (reverse recovery time) of 100 ns. In addition, it is reach unaffected. Provide switching energy up to 2.2mj (on), 1.05mj (off). Test condition included 400v, 55a, 2ohm, 15v. The ixys's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 46 weeks standard lead time. Features an IGBT pt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product genx4™, xpt™, is a highly preferred choice for users. to-264 (ixxk) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 880 w. Moreover, it corresponds to ixxk110, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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IXXK110N65B4H1, IXXX110N65B4H1, XPT 650V IGBTs GenX4 with Sonic Diode(Technical Reference)
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IXX(K,X)110N65B4H1(Datasheets)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11474235 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11474235.
Yes. We ship IXXK110N65B4H1 Internationally to many countries around the world.