Diodes Incorporated DMN3011LSSQ-13

DMN3011LSSQ-13 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.25V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
10mOhm @ 12A, 10V
title:
DMN3011LSSQ-13
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Qualification:
AEC-Q101
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1130 pF @ 15 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
19.7 nC @ 10 V
Supplier Device Package:
8-SO
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Power Dissipation (Max):
1.58W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is DMN3011LSSQ-13. The typical Vgs (th) (max) of the product is 2.25v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 10mohm @ 12a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 1130 pf @ 15 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The maximum gate charge and given voltages include 19.7 nc @ 10 v. 8-so is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 11a (ta). The product carries maximum power dissipation 1.58w (ta). This product use mosfet (metal oxide) technology.

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