Diodes Incorporated DMN2992UFO-7R

DMN2992UFO-7R Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
title:
DMN2992UFO-7R
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Qualification:
-
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
15.6 pF @ 16 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
410 pC @ 4.5 V
Supplier Device Package:
X2-DFN0604-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
530mA (Ta)
Power Dissipation (Max):
420mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is DMN2992UFO-7R. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xfdfn. It has a maximum Rds On and voltage of 990mohm @ 100ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 15.6 pf @ 16 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 410 pc @ 4.5 v. x2-dfn0604-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 530ma (ta). The product carries maximum power dissipation 420mw (ta). This product use mosfet (metal oxide) technology.

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