Diotec Semiconductor MMFTN3479KW

Diotec Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
64mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.8 nC @ 4.5 V
edacadModel:
MMFTN3479KW Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/22193132
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
900mW (Ta)
Qualification:
-
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
260 pF @ 10 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
SOT-323
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Diotec Semiconductor. The manufacturer part number is MMFTN3479KW. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. It has a maximum Rds On and voltage of 64mohm @ 1.5a, 4.5v. The maximum gate charge and given voltages include 2.8 nc @ 4.5 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 900mw (ta). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 260 pf @ 10 v. The product is available in surface mount configuration. sot-323 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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MMFTN3479KW(Datasheets)

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