Cambridge GaN Devices CGD65B130SH2

CGD65B130SH2 Cambridge GaN Devices
Cambridge GaN Devices

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
182mOhm @ 900mA, 12V
Gate Charge (Qg) (Max) @ Vgs:
1.9 nC @ 12 V
Vgs(th) (Max) @ Id:
4.2V @ 4.2mA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+20V, -1V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Qualification:
-
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Grade:
-
Series:
ICeGaN™
Supplier Device Package:
8-DFN (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A
Technology:
GaNFET (Gallium Nitride)
ECCN:
EAR99
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This is manufactured by Cambridge GaN Devices. The manufacturer part number is CGD65B130SH2. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 182mohm @ 900ma, 12v. The maximum gate charge and given voltages include 1.9 nc @ 12 v. The typical Vgs (th) (max) of the product is 4.2v @ 4.2ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 12v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +20v, -1v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 26 weeks standard lead time. The product is available in surface mount configuration. The product icegan™, is a highly preferred choice for users. 8-dfn (5x6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 12a. This product use ganfet (gallium nitride) technology. The product is designated with the ear99 code number.

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