Qorvo UF4C120070B7S

UF4C120070B7S Qorvo
Qorvo

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
91mOhm @ 20A, 12V
title:
UF4C120070B7S
Vgs(th) (Max) @ Id:
6V @ 10mA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±20V
Power Dissipation (Max):
183W (Tc)
Qualification:
-
standardLeadTime:
44 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 800 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
37.8 nC @ 15 V
Supplier Device Package:
D2PAK-7L
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
25.7A (Tj)
Technology:
SiCFET (Silicon Carbide)
Checking for live stock

This is manufactured by Qorvo. The manufacturer part number is UF4C120070B7S. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 91mohm @ 20a, 12v. The typical Vgs (th) (max) of the product is 6v @ 10ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 12v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 183w (tc). It has a long 44 weeks standard lead time. The product's input capacitance at maximum includes 1370 pf @ 800 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 37.8 nc @ 15 v. d2pak-7l is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 25.7a (tj). This product use sicfet (silicon carbide) technology.

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FAQs

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