Diotec Semiconductor DIW012N65

Diotec Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
190mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
edacadModel:
DIW012N65 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/22190008
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Power Dissipation (Max):
125W (Tc)
Qualification:
-
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1479 pF @ 34 V
Mounting Type:
Through Hole
Grade:
-
Series:
-
Supplier Device Package:
TO-247
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Diotec Semiconductor. The manufacturer part number is DIW012N65. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 190mohm @ 40a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 125w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 1479 pf @ 34 v. The product is available in through hole configuration. to-247 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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DIW012N65(Datasheets)

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