Diotec Semiconductor DIJ2A3N65

Diotec Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
2.6Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
edacadModel:
DIJ2A3N65 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/22189927
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Power Dissipation (Max):
30W (Tc)
Qualification:
-
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
560 pF @ 25 V
Mounting Type:
Through Hole
Grade:
-
Series:
-
Supplier Device Package:
ITO-220F
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
2.3A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Diotec Semiconductor. The manufacturer part number is DIJ2A3N65. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 2.6ohm @ 3.5a, 10v. The maximum gate charge and given voltages include 13 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 30w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 560 pf @ 25 v. The product is available in through hole configuration. ito-220f is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 2.3a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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DIJ2A3N65(Datasheets)
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Diotec MDS(Environmental Information)

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