Diotec Semiconductor DI060N06PQ

DI060N06PQ Diotec Semiconductor
Diotec Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
edacadModel:
DI060N06PQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/22192816
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
70W (Tc)
Qualification:
-
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 30 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
8-QFN (5x6)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Diotec Semiconductor. The manufacturer part number is DI060N06PQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 7mohm @ 20a, 10v. The maximum gate charge and given voltages include 27 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 70w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 1700 pf @ 30 v. The product is available in surface mount configuration. 8-qfn (5x6) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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DI060N06PQ(Datasheets)
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Diotec MDS(Environmental Information)

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FAQs

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