STMicroelectronics STN3P10F6

STMicroelectronics

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STN3P10F6 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/22146781
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
3.3W
Qualification:
-
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
SOT-223
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3A
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STN3P10F6. The product is rohs3 compliant. The product has -55°c ~ 175°c operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 180mohm @ 1.5a, 10v. The maximum gate charge and given voltages include 16.5 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 3.3w. It has a long 26 weeks standard lead time. The product's input capacitance at maximum includes 900 pf @ 25 v. The product is available in surface mount configuration. sot-223 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3a. This product use mosfet (metal oxide) technology.

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STN3P10F6(Datasheets)

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