STMicroelectronics SCT055W65G3-4AG

STMicroelectronics

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
72mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+18V, -5V
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
721 pF @ 40 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
210W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is SCT055W65G3-4AG. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 72mohm @ 15a, 18v. The maximum gate charge and given voltages include 32 nc @ 18 v. The typical Vgs (th) (max) of the product is 4.2v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +18v, -5v. It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 721 pf @ 40 v. The product is available in through hole configuration. The product is automotive, a grade of class. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 30a (tc). The product carries maximum power dissipation 210w (tc). This product use sic (silicon carbide junction transistor) technology.

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