STMicroelectronics SCT012H90G3AG

STMicroelectronics

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
15.8mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs:
138 nC @ 18 V
Vgs(th) (Max) @ Id:
4.2V @ 10mA
REACH Status:
REACH Unaffected
edacadModel:
SCT012H90G3AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
edacadModelUrl:
/en/models/22146758
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
+18V, -5V
Qualification:
AEC-Q101
standardLeadTime:
45 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3880 pF @ 600 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
H2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Power Dissipation (Max):
625W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is SCT012H90G3AG. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 15.8mohm @ 60a, 18v. The maximum gate charge and given voltages include 138 nc @ 18 v. The typical Vgs (th) (max) of the product is 4.2v @ 10ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The product has a 900 v drain to source voltage. The maximum Vgs rate is +18v, -5v. It has a long 45 weeks standard lead time. The product's input capacitance at maximum includes 3880 pf @ 600 v. The product is available in surface mount configuration. The product is automotive, a grade of class. h2pak-7 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 110a (tc). The product carries maximum power dissipation 625w (tc). This product use sic (silicon carbide junction transistor) technology.

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