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Infineon Technologies IMBG65R020M2HXTMA1

IMBG65R020M2HXTMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
24mOhm @ 46.9A, 18V
title:
IMBG65R020M2HXTMA1
Vgs(th) (Max) @ Id:
5.6V @ 9.5mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 20V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+23V, -7V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
326W (Tc)
Qualification:
-
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2038 pF @ 400 V
Mounting Type:
Surface Mount
Grade:
-
Series:
448
Gate Charge (Qg) (Max) @ Vgs:
57 nC @ 18 V
Supplier Device Package:
PG-TO263-7-12
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
91A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMBG65R020
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IMBG65R020M2HXTMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 24mohm @ 46.9a, 18v. The typical Vgs (th) (max) of the product is 5.6v @ 9.5ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 20v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +23v, -7v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 326w (tc). It has a long 26 weeks standard lead time. The product's input capacitance at maximum includes 2038 pf @ 400 v. The product is available in surface mount configuration. The product 448, is a highly preferred choice for users. The maximum gate charge and given voltages include 57 nc @ 18 v. pg-to263-7-12 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 91a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to imbg65r020, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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You can order Infineon Technologies brand products with IMBG65R020M2HXTMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IMBG65R020M2HXTMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IMBG65R020M2HXTMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET26153261 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET26153261.
Yes. We ship IMBG65R020M2HXTMA1 Internationally to many countries around the world.