Goford Semiconductor GT016N10Q

GT016N10Q Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
165 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:
9530 pF @ 50 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
228A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is GT016N10Q. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. It has a maximum Rds On and voltage of 2.2mohm @ 20a, 10v. The maximum gate charge and given voltages include 165 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product's input capacitance at maximum includes 9530 pf @ 50 v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 228a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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GT016N10Q(Datasheets)

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