Diodes Incorporated DMT10H009LSSQ-13

Diodes Incorporated

Product Information

FET Feature:
-
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40.2 nC @ 10 V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
1.8W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2309 pF @ 50 V
Qualification:
AEC-Q101
standardLeadTime:
20 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-SO
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 48A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is DMT10H009LSSQ-13. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 9mohm @ 10a, 10v. The maximum gate charge and given voltages include 40.2 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1.8w (ta). The product's input capacitance at maximum includes 2309 pf @ 50 v. It has a long 20 weeks standard lead time. The product is available in surface mount configuration. The product is automotive, a grade of class. 8-so is the supplier device package value. The continuous current drain at 25°C is 13a (ta), 48a (tc). This product use mosfet (metal oxide) technology.

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DMT10H009LSSQ(Datasheets)

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