Goford Semiconductor G020N03T

G020N03T Goford Semiconductor
Goford Semiconductor

Product Information

HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
RoHS Status:
Not applicable
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6005 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
140A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G020N03T. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 110 nc @ 10 v. The product is not applicable. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2.3mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 83w (tc). The product's input capacitance at maximum includes 6005 pf @ 15 v. The product is available in surface mount configuration. to-220 is the supplier device package value. The continuous current drain at 25°C is 140a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G020N03T(Datasheets)
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SOLDERING PROFILE(Other Related Documents)

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