Qorvo UJ3C120070K4S

Qorvo

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
6V @ 10mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
70mOhm @ 20A, 12V
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 15 V
RoHS Status:
ROHS3 Compliant
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 100 V
standardLeadTime:
44 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
34.5A (Tc)
Power Dissipation (Max):
254.2W (Tc)
Technology:
SiCFET (Silicon Carbide)
Checking for live stock

This is manufactured by Qorvo. The manufacturer part number is UJ3C120070K4S. The typical Vgs (th) (max) of the product is 6v @ 10ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 70mohm @ 20a, 12v. The maximum gate charge and given voltages include 46 nc @ 15 v. The product is rohs3 compliant. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 12v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 1500 pf @ 100 v. It has a long 44 weeks standard lead time. The product is available in through hole configuration. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 34.5a (tc). The product carries maximum power dissipation 254.2w (tc). This product use sicfet (silicon carbide) technology.

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET25840587 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Qorvo" products on our website by using Enrgtech's Unique Manufacturing Part Number ET25840587.
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