Goford Semiconductor GS65R038Q4

GS65R038Q4 Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0000
RoHS Status:
RoHS Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
49mOhm @ 30A, 18V
Vgs(th) (Max) @ Id:
4V @ 10mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
-10V, +20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
395W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is GS65R038Q4. It is assigned with possible HTSUS value of 8541.29.0000. The product is rohs compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 49mohm @ 30a, 18v. The typical Vgs (th) (max) of the product is 4v @ 10ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 650 v drain to source voltage. The maximum Vgs rate is -10v, +20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 395w (tc). The product's input capacitance at maximum includes 1480 pf @ 1000 v. The product is available in through hole configuration. to-247-4l is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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