Goford Semiconductor GS120R080Q4

GS120R080Q4 Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
4V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 18V
RoHS Status:
RoHS Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
-10V, +20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
175W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1455 pF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is GS120R080Q4. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 4v @ 5ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 100mohm @ 20a, 18v. The product is rohs compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is -10v, +20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 175w (tc). The product's input capacitance at maximum includes 1455 pf @ 1000 v. The product is available in through hole configuration. to-247-4l is the supplier device package value. The continuous current drain at 25°C is 32a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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GS120R080Q4(Datasheets)

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