NXP USA Inc. PSMN1R8-30BL,118

PSMN1R8-30BL-118 NXP USA Inc. PSMN1R8-30BL,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10180 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R8
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN1R8-30BL,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 170 nc @ 10 v. It has a maximum Rds On and voltage of 1.8mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 270w (tc). The product's input capacitance at maximum includes 10180 pf @ 15 v. The product is available in surface mount configuration. d2pak is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn1r8, a base product number of the product. The product is designated with the ear99 code number.

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