NXP Semiconductors PMCM6501VPEZ

PMCM6501VPEZ NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFBGA, WLCSP
Rds On (Max) @ Id, Vgs:
25mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
29.4 nC @ 4.5 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Power Dissipation (Max):
556mW (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1400 pF @ 6 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-WLCSP (1.48x0.98)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
6.2A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMCM6501VPEZ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfbga, wlcsp. It has a maximum Rds On and voltage of 25mohm @ 3a, 4.5v. The maximum gate charge and given voltages include 29.4 nc @ 4.5 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product has a 12 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 556mw (ta), 12.5w (tc). The product's input capacitance at maximum includes 1400 pf @ 6 v. The product is available in surface mount configuration. 6-wlcsp (1.48x0.98) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 6.2a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PMCM6501VPEZ Datasheet(Datasheets)

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