NXP Semiconductors PMCM6501UNEZ

NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
6-XFBGA, WLCSP
Gate Charge (Qg) (Max) @ Vgs:
6.2 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
21mOhm @ 3A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
400mW
Input Capacitance (Ciss) (Max) @ Vds:
105 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-WLCSP (1.48x0.98)
Current - Continuous Drain (Id) @ 25°C:
8.7A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMCM6501UNEZ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-xfbga, wlcsp. The maximum gate charge and given voltages include 6.2 nc @ 4.5 v. It has a maximum Rds On and voltage of 21mohm @ 3a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 400mw. The product's input capacitance at maximum includes 105 pf @ 10 v. The product is available in surface mount configuration. 6-wlcsp (1.48x0.98) is the supplier device package value. The continuous current drain at 25°C is 8.7a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PMCM6501UNEZ Datasheet(Datasheets)

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