International Rectifier IRF6644TRPBF

IRF6644TRPBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.8V @ 150µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
DirectFET™ Isometric MN
Rds On (Max) @ Id, Vgs:
13mOhm @ 10.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.8W (Ta), 89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2210 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
DIRECTFET™ MN
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
10.3A (Ta), 60A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRF6644TRPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.8v @ 150µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in directfet™ isometric mn. It has a maximum Rds On and voltage of 13mohm @ 10.3a, 10v. The maximum gate charge and given voltages include 47 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.8w (ta), 89w (tc). The product's input capacitance at maximum includes 2210 pf @ 25 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. directfet™ mn is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 10.3a (ta), 60a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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