International Rectifier IRF640NLPBF

IRF640NLPBF International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Rds On (Max) @ Id, Vgs:
150mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1160 pF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-262
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by International Rectifier. The manufacturer part number is IRF640NLPBF. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 67 nc @ 10 v. It has a maximum Rds On and voltage of 150mohm @ 11a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 1160 pf @ 25 v. The product is available in through hole configuration. The product hexfet®, is a highly preferred choice for users. to-262 is the supplier device package value. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology.

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FAQs

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