International Rectifier IRF60DM206

IRF60DM206 International Rectifier
International Rectifier

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.7V @ 150µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
DirectFET™ Isometric ME
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6530 pF @ 25 V
Mounting Type:
Surface Mount
Series:
StrongIRFET™
Supplier Device Package:
DirectFET™ Isometric ME
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by International Rectifier. The manufacturer part number is IRF60DM206. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.7v @ 150µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in directfet™ isometric me. It has a maximum Rds On and voltage of 2.9mohm @ 80a, 10v. The maximum gate charge and given voltages include 200 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 96w (tc). The product's input capacitance at maximum includes 6530 pf @ 25 v. The product is available in surface mount configuration. The product strongirfet™, is a highly preferred choice for users. directfet™ isometric me is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 130a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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