International Rectifier IRF200B211

International Rectifier

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4.9V @ 50µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Rds On (Max) @ Id, Vgs:
170mOhm @ 7.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Power Dissipation (Max):
80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
790 pF @ 50 V
Mounting Type:
Through Hole
Series:
HEXFET®, StrongIRFET™
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by International Rectifier. The manufacturer part number is IRF200B211. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4.9v @ 50µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 23 nc @ 10 v. It has a maximum Rds On and voltage of 170mohm @ 7.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 80w (tc). The product's input capacitance at maximum includes 790 pf @ 50 v. The product is available in through hole configuration. The product hexfet®, strongirfet™, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology.

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