NXP USA Inc. BUK965R4-40E,118

BUK965R4-40E-118 NXP USA Inc. BUK965R4-40E,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
33.9 nC @ 5 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±10V
Power Dissipation (Max):
137W (Tc)
Qualification:
AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds:
4483 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchMOS™
Supplier Device Package:
D2PAK
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BUK965R4-40E,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 4.4mohm @ 25a, 10v. The maximum gate charge and given voltages include 33.9 nc @ 5 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±10v. The product carries maximum power dissipation 137w (tc). The product's input capacitance at maximum includes 4483 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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BUK965R4-40E(Datasheets)

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