STMicroelectronics STW65N045M9-4

STW65N045M9-4 STMicroelectronics
STMicroelectronics

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
45mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs(th) (Max) @ Id:
4.2V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
312W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4610 pF @ 400 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
54A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
STW65N
Channel Type:
N
Package Type:
TO247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
54 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STW65N045M9-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product stw65n, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to247-4. It consists of 1 elements per chip. While 54 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 45mohm @ 28a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.2v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 312w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 4610 pf @ 400 v. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 54a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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STW65N045M9-4(Datasheets)
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Datasheet - STW65N045M9-4(Technical Reference)

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