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This is manufactured by Goford Semiconductor. The manufacturer part number is GC080N65QF. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 80mohm @ 16a, 10v. The maximum gate charge and given voltages include 100 nc @ 10 v. The product is rohs compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 298w (tc). The product's input capacitance at maximum includes 4900 pf @ 380 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. to-247 is the supplier device package value. The continuous current drain at 25°C is 50a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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