Fairchild Semiconductor FQPF12N60C

Fairchild Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
650mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2290 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
51W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQPF12N60C. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 63 nc @ 10 v. The product is rohs non-compliant. In addition, it is vendor undefined. It has a maximum Rds On and voltage of 650mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 2290 pf @ 25 v. The product is available in through hole configuration. to-220f-3 is the supplier device package value. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 51w (tc). This product use mosfet (metal oxide) technology.

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FAQs

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