Fairchild Semiconductor FQA90N08

FQA90N08 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
16mOhm @ 45A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
3250 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Power Dissipation (Max):
214W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQA90N08. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 110 nc @ 10 v. The product is rohs non-compliant. In addition, it is vendor undefined. It has a maximum Rds On and voltage of 16mohm @ 45a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 3250 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-3pn is the supplier device package value. The continuous current drain at 25°C is 90a (tc). The product carries maximum power dissipation 214w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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