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United Kingdom
This is manufactured by Goford Semiconductor. The manufacturer part number is G080N10M. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 7.5mohm @ 30a, 10v. The maximum gate charge and given voltages include 107 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 370w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 13950 pf @ 50 v. The product is available in surface mount configuration. to-263 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 180a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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