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Diodes Incorporated DMP4065S-7-52

DMP4065S-7-52 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
12.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
80mOhm @ 4.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
720mW
Input Capacitance (Ciss) (Max) @ Vds:
587 pF @ 20 V
standardLeadTime:
23 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMP4065
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMP4065S-7-52. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 12.2 nc @ 10 v. It has a maximum Rds On and voltage of 80mohm @ 4.2a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 720mw. The product's input capacitance at maximum includes 587 pf @ 20 v. It has a long 23 weeks standard lead time. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 2.4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmp4065, a base product number of the product. The product is designated with the ear99 code number.

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DMP4065S(Datasheets)

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Yes. We ship DMP4065S-7-52 Internationally to many countries around the world.