Diodes Incorporated DMP10H4D2S-7-50

DMP10H4D2S-7-50 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
1.8 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 500mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
380mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
87 pF @ 25 V
standardLeadTime:
20 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
270mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMP10
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMP10H4D2S-7-50. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 1.8 nc @ 10 v. It has a maximum Rds On and voltage of 4.2ohm @ 500ma, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 380mw (ta). The product's input capacitance at maximum includes 87 pf @ 25 v. It has a long 20 weeks standard lead time. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 270ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmp10, a base product number of the product. The product is designated with the ear99 code number.

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DMP10H4D2S(Datasheets)

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