Diodes Incorporated DMG3415UFY4Q-7-52

Diodes Incorporated

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XDFN
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
39mOhm @ 4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
16 V
Vgs (Max):
±8V
Power Dissipation (Max):
650mW
Input Capacitance (Ciss) (Max) @ Vds:
282 pF @ 10 V
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
X2-DFN2015-3
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMG3415
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMG3415UFY4Q-7-52. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn. The maximum gate charge and given voltages include 10 nc @ 4.5 v. It has a maximum Rds On and voltage of 39mohm @ 4a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 16 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 650mw. The product's input capacitance at maximum includes 282 pf @ 10 v. It has a long 21 weeks standard lead time. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. x2-dfn2015-3 is the supplier device package value. The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmg3415, a base product number of the product. The product is designated with the ear99 code number.

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DMG3415UFY4Q(Datasheets)

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