Goford Semiconductor GT040N04D5I

GT040N04D5I Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 10A, 10V
title:
GT040N04D5I
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2298 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 10 V
Supplier Device Package:
8-DFN (4.9x5.75)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is GT040N04D5I. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 3.5mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 160w (tc). The product's input capacitance at maximum includes 2298 pf @ 20 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 50 nc @ 10 v. 8-dfn (4.9x5.75) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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GT040N04D5I(Datasheets)

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