Goford Semiconductor G5N02L

G5N02L Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
18mOhm @ 4.2A, 10V
title:
G5N02L
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
1.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
780 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 4.5 V
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G5N02L. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 18mohm @ 4.2a, 10v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 1.25w (tc). The product's input capacitance at maximum includes 780 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 11 nc @ 4.5 v. sot-23-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G5N02L(Datasheets)

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