Goford Semiconductor G10N06

G10N06 Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
RoHS Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2180 pF @ 30 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOP
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G10N06. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 16mohm @ 9a, 10v. The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.6w (tc). The product's input capacitance at maximum includes 2180 pf @ 30 v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. 8-sop is the supplier device package value. The continuous current drain at 25°C is 10a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G10N06(Datasheets)

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