Vishay Siliconix SISS5108DN-T1-GE3

SISS5108DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 10A, 10V
title:
SISS5108DN-T1-GE3
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 65.7W (Tc)
standardLeadTime:
34 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1150 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8S
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
15.4A (Ta), 55.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS5108
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SISS5108DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. It has a maximum Rds On and voltage of 10.5mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 65.7w (tc). It has a long 34 weeks standard lead time. The product's input capacitance at maximum includes 1150 pf @ 50 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 23 nc @ 10 v. powerpak® 1212-8s is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 15.4a (ta), 55.9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siss5108, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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N-Channel 100 V (D-S) MOSFET(Datasheets)

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FAQs

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