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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ9A10M3,S4Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 47 nc @ 10 v. It has a maximum Rds On and voltage of 170mohm @ 4.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2900 pf @ 10 v. The product is available in through hole configuration. The product u-mosvi, is a highly preferred choice for users. to-220sis is the supplier device package value. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 19w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj9a10, a base product number of the product. The product is designated with the ear99 code number.
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