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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ20A10M3(STA4,Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 90mohm @ 10a, 10v. The maximum gate charge and given voltages include 120 nc @ 10 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 5500 pf @ 10 v. The product is available in through hole configuration. The product u-mosvi, is a highly preferred choice for users. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). The product carries maximum power dissipation 35w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj20a10, a base product number of the product. The product is designated with the ear99 code number.
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