Rohm Semiconductor R6055VNZC17

R6055VNZC17 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6.5V @ 1.5mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Rds On (Max) @ Id, Vgs:
71mOhm @ 16A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V, 15V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
99W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3700 pF @ 100 V
standardLeadTime:
18 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PF
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6055VN
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6055VNZC17. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 6.5v @ 1.5ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3 full pack. The maximum gate charge and given voltages include 80 nc @ 10 v. It has a maximum Rds On and voltage of 71mohm @ 16a, 15v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v, 15v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 99w (tc). The product's input capacitance at maximum includes 3700 pf @ 100 v. It has a long 18 weeks standard lead time. The product is available in through hole configuration. to-3pf is the supplier device package value. The continuous current drain at 25°C is 23a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to r6055vn, a base product number of the product. The product is designated with the ear99 code number.

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