Rohm Semiconductor BSS670T116

BSS670T116 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2V @ 10µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
680mOhm @ 650mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
200mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
47 pF @ 30 V
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
OptiMOS®
Supplier Device Package:
SST3
Current - Continuous Drain (Id) @ 25°C:
650mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is BSS670T116. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2v @ 10µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 680mohm @ 650ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 200mw (ta). The product's input capacitance at maximum includes 47 pf @ 30 v. It has a long 21 weeks standard lead time. The product is available in surface mount configuration. The product optimos®, is a highly preferred choice for users. sst3 is the supplier device package value. The continuous current drain at 25°C is 650ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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