Goford Semiconductor G170P03D3

G170P03D3 Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
15mOhm @ 5A, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
15W (Tc)
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-DFN (3.15x3.05)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G170P03D3. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 15mohm @ 5a, 10v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 15w (tc). It has a long 8 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-dfn (3.15x3.05) is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G170P03D3(Datasheets)

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