Goford Semiconductor G75P04FI

G75P04FI Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
106 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
7mOhm @ 10A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6275 pF @ 20 V
Mounting Type:
Through Hole
Series:
TrenchFET®
Supplier Device Package:
TO-220F
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G75P04FI. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 106 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 7mohm @ 10a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 89w (tc). The product's input capacitance at maximum includes 6275 pf @ 20 v. The product is available in through hole configuration. The product trenchfet®, is a highly preferred choice for users. to-220f is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G75P04FI(Datasheets)

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