ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M040120P

AS1M040120P ANBON SEMICONDUCTOR (INT'L) LIMITED
ANBON SEMICONDUCTOR (INT'L) LIMITED

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 10mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
142 nC @ 20 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
55mOhm @ 40A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
330W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2946 pF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. The manufacturer part number is AS1M040120P. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 10ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 142 nc @ 20 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 55mohm @ 40a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 330w (tc). The product's input capacitance at maximum includes 2946 pf @ 1000 v. The product is available in through hole configuration. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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AS1M040120P(Datasheets)

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