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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW5200FNH,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 52mohm @ 13a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 250 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 800mw (ta), 142w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 2200 pf @ 100 v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 22 nc @ 10 v. 8-dsop advance is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 26a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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