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This is manufactured by Goford Semiconductor. The manufacturer part number is 630AT. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 250mohm @ 1a, 10v. The maximum gate charge and given voltages include 11.8 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 83w (tc). The product's input capacitance at maximum includes 509 pf @ 25 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. The product trenchfet®, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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