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This is manufactured by Diodes Incorporated. The manufacturer part number is DMT10H9M9SCT. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.9v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 8.8mohm @ 20a, 10v. The maximum gate charge and given voltages include 30 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.3w (ta), 156w (tc). The product's input capacitance at maximum includes 2085 pf @ 50 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 99a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmt10, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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