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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TW027N65C,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 37mohm @ 29a, 18v. The maximum gate charge and given voltages include 65 nc @ 18 v. The typical Vgs (th) (max) of the product is 5v @ 3ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 156w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 2288 pf @ 400 v. The product is available in through hole configuration. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 58a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
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